GE General Eastern pressure transmitter 8000 Series High Accuracy Resonant Pressure Sensor

The RPS/DPS 8000 resonant silicon pressure sensor was the first pressure sensor to incorporate GE’s TERPS technology platform. TERPS (Trench Etched Resonant Pressure Sensor) offers an order of magnitude greater performance over current technologies to provide the highest accuracy and stability sensor available. It also significantly extends the pressure range capability conventionally associated with resonating pressure technology (RPT) sensors and enables robust packaging, suitable for harsh environments.

The new RPS/DPS 8100 resonant pressure sensor introduces an exposed construction for low g sensitivity and exceptional performance around barometric pressures.

In addition, the 8000 Series product line offers a wide range of pressure and electrical connections to allow flexible customization in a wide range of applications, from aerospace to subsea and from process engineering to industrial instrumentation.

Common to all versions • Designed with brand new TERPS technology • High precision, ±0.01% FS over compensated temperature range • High stability, ±100 ppm FS/year • Multiple output configurations, TTL and Diode, RS-232 and RS-485 • Wide selection of pressure and electrical connections to suit specific requirements

8000 • Welded 316L construction • Pressure ranges, 2 bar (30 psi) up to 70 bar (1000 psi) • Media isolated construction, suitable for use in harsh environments • Wide temperature range,  -40 °C to +85 °C (-40 °F to 185 °F) 8100 • Exposed silicon construction • Barometric pressure to 0.1mbar (0.1hpa) • Pressure range, 1 to 35 bar (15 to 500 psi) • Low g sensitivity 8200/8300 • Welded Hastelloy C276 construction • Pressure range, 2 bar (30 psi) up to 70 bar (1000 psi) • Wide temperature range, -40 °C to 125 °C (-40 °F to 25 °F)

Silicon for improved performances:

• We have fully leveraged the mechanical properties of silicon in making the TERPS resonator eleme
• To optimize and balance the design of resonator, we have used Deep Reactive Ion Etching (DRIE) silicon processing  techniques. DRIE gives the ability to design structures with complex and arbitrary geometries.
• Precision of 0.01% FS (100 ppm)
• Stability of 0.01% FS per annum (100 ppm)
• Levels of performance only previously available from instruments
• Extends calibration periods by a factor of 10

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